RN4985FE,LXHF(CT

RN4985FE,LXHF(CT

  • image of Bipolar Transistor Arrays, Pre-Biased>RN4985FE,LXHF(CT
  • image of Bipolar Transistor Arrays, Pre-Biased>RN4985FE,LXHF(CT
RN4985FE,LXHF(CT
Bipolar Transistor Arrays, Pre-Biased
Toshiba Electronic Devices and Storage Corporation
AUTO AEC-Q TR N
-
Tape & Reel (TR)


AUTO AEC-Q TR NPN+PNP Q1BSR=2.2K

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrToshiba Electronic Devices and Storage Corporation
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max100mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Frequency - Transition250MHz, 200MHz
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
Supplier Device PackageES6
GradeAutomotive
QualificationAEC-Q101

captcha

+86-18926045841

点击这里给我发消息
0