TP65H070G4QS-TR

TP65H070G4QS-TR

  • image of Single FETs, MOSFETs>TP65H070G4QS-TR
  • image of Single FETs, MOSFETs>TP65H070G4QS-TR
Part number TP65H070G4QS-TR
Product classification Single FETs, MOSFETs
Manufacturer Transphorm
Type 650 V 29 A GAN
Encapsulation -
Packing Tape & Reel (TR)
RoHS status 1

Product advantages

650 V 29 A GAN FET

Product parameters
PDF(1)
TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerSFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Rds On (Max) @ Id, Vgs85mOhm @ 16A, 10V
Power Dissipation (Max)96W (Tc)
Vgs(th) (Max) @ Id4.8V @ 700µA
Supplier Device PackageTOLL
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs8.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds600 pF @ 400 V
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Service hours: Monday to Saturday 9:00-18:00
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Service hours: Monday to Saturday 9:00-18:00
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