NXH100T120L3Q0S1NG

NXH100T120L3Q0S1NG

  • image of IGBT模块>NXH100T120L3Q0S1NG
  • image of IGBT模块>NXH100T120L3Q0S1NG
NXH100T120L3Q0S1NG
IGBT模块
Sanyo Semiconductor/onsemi
1200V GEN III Q
-
托盘
1


1200V GEN III Q0PACK WITH NI-PLA

产品参数
PDF(1)
类型描述
制造商Sanyo Semiconductor/onsemi
系列-
包裹托盘
产品状态ACTIVE
包装/箱Module
安装类型Chassis Mount
输入Standard
配置Three Level Inverter
工作温度-40°C ~ 175°C (TJ)
Vce(on)(最大值)@Vge, Ic2.2V @ 15V, 75A
NTC热敏电阻Yes
供应商设备包18-PIM/Q0PACK (55x32.5)
集电极电流 (Ic)(最大)54 A
电压 - 集电极发射极击穿(最大)650 V
功率 - 最大122 W
电流 - 集电极截止(最大)200 µA
输入电容 (Cies) @ Vce4877 pF @ 25 V

captcha

+86-18926045841

点击这里给我发消息
0